材料科学
消散
双极结晶体管
光电子学
位移电流
辐射
晶体管
流离失所(心理学)
存水弯(水管)
接受者
电压
共发射极
原子物理学
电气工程
光学
物理
凝聚态物理
工程类
气象学
热力学
心理治疗师
心理学
作者
Kihyun Kim,Jungsik Kim
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2021-02-01
卷期号:11 (2)
被引量:5
摘要
The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology. DC characteristics, breakdown voltage, and power dissipation are analyzed according to the position, energy, and types of trap caused by the radiation effect. The on-current is degraded by 100% due to displacement defect, which is generated near the emitter–gate region. An acceptor-like trap with Ec − 0.4 eV shows the most significant degradation compared to an acceptor-like trap with Ec − 0.2 eV and a donor-like trap with Ev + 0.2 eV. At 300 K, the breakdown voltage is unaffected by radiation displacement defects but is significantly reduced in a high-temperature environment (425 K) because the depletion width becomes shorter due to the displacement defect. Power dissipation exhibits immunity to the displacement defect induced by radiation at both room temperature and high temperatures.
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