材料科学
光电子学
铁电性
二极管
泄漏(经济)
CMOS芯片
晶体管
非易失性存储器
氧化物
薄脆饼
电压
电气工程
电介质
经济
宏观经济学
冶金
工程类
作者
Xiwen Liu,Jeffrey Zheng,Dixiong Wang,Pariasadat Musavigharavi,Eric A. Stach,Roy H. Olsson,Deep Jariwala
摘要
In this Letter, we report a back-end-of-line (BEOL), complementary metal–oxide–semiconductor (CMOS)-compatible Al0.64Sc0.36N-based ferroelectric diode that shows polarization-dependent hysteresis in its leakage currents. Our device comprises a metal/insulator/ferroelectric/metal structure (Pt/native oxide/Al0.64Sc0.36N/Pt) that is compatible with BEOL temperatures (≤ 350 °C) grown on top of a 4-in. silicon wafer. The device shows self-selective behavior as a diode with > 105 rectification ratio (for 5 V). It can suppress sneak currents without the need for additional access transistors or selectors. Furthermore, given the polarization-dependent leakage, the diode current–voltage sweeps are analogous to that of a memristor with an on/off ratio of ∼ 50 000 between low and high resistance states. Our devices also exhibit stable programed resistance states during DC cycling and a retention time longer than 1000 s at 300 K. These results demonstrate that this system has significant potential as a future high-performance post-CMOS compatible nonvolatile memory technology.
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