材料科学
纳米技术
光电探测器
设计要素和原则
半导体
工程物理
光电子学
系统工程
工程类
作者
Xiaojie Xu,Siyuan Li,Jiaxin Chen,Sa Cai,Zhenghao Long,Xiaosheng Fang
标识
DOI:10.1002/adfm.201802029
摘要
Abstract ZnS, as one of the first semiconductors discovered and a rising material star, has embraced exciting breakthroughs in the past few years. To shed light on the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review. Recent progress on modifications of ZnS allows it to be extensively and effectively used in versatile applications, including transparent conductors, UV photodetectors, luminescent devices, and catalysis, which are clearly and comprehensively summarized in this work. Novel functional devices springing up from the newly developed ZnS‐based materials are highlighted as well. This review not only provides a scientific insight into the advances of ZnS‐based materials, but also touches on the future opportunities in this inspiring field.
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