极紫外光刻
平版印刷术
浸没式光刻
炸薯条
多重图案
纳米技术
计算机科学
材料科学
光电子学
电信
抵抗
图层(电子)
作者
Mark van de Kerkhof,Jos Benschop,Vadim Banine
标识
DOI:10.1016/j.sse.2019.03.006
摘要
• Amount of transistors on chip oubles every 1.5–2 years accordig to Moore’s law. • Multiple patterning is required to obtain ∼10–16 nm half-pitch using immersion lithography. • EUV scanners will extend Moore’s Law for the foreseeable future. • View of further extension of EUV in the future will be discussed in this article.
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