Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics

Abstract The device standards necessary for high‐performance carbon nanotube (CNT) field‐effect transistors (FETs) for integrated circuits (ICs) are discussed by illustrating key device metrics. Recent advances in solution‐processed CNT network‐materials are introduced and some important progress made in CNT‐network film‐based transistors and ICs is explored. The status of aligned CNT thin‐film materials and representative work in high‐performance electronics is discussed. Finally, the major challenges to the further development of high‐performance CNT thin‐film electronics and the prospects in this exciting field are summarized.