Ion current density on the substrate during short-pulse HiPIMS

Abstract A probe method for measuring the ion current density and theoretical calculations of the dynamics of neutral and charged plasma particles using the ionization region model (IRM) is used to study short and ultra-short pulse high-power impulse magnetron sputtering (HiPIMS). This paper studies reasons for the increase in the average ion current density on the substrate at shorter pulses, when the average discharge power does not change. HiPIMS pulses are applied to the copper target at constant values of average discharge power (1000 W) and peak current (150 А), respectively, while the pulse time of the discharge voltage ranges from 4 to 50 µ s. A power supply with low output inductance is designed to generate ultra-short pulses. It is shown that shorter discharge pulses lead to a multiple growth (from 2 to 7 mA cm −2 ) in the average ion current density on the substrate and a growth in the peak intensity of Ar + , Cu + and Cu 2+ recorded by optical emission spectroscopy. A theoretical model of this effect is based on the spatially averaged IRM, which considers afterglow effects. According to theoretical calculations, the increase in the average ion current density on the substrate is determined by the plasma dissipation in the ionized region after the pulse ends. Also, a decrease in the copper deposition rate from 180 to 60 nm min −1 with decreasing pulse time from 40 to 4 µ s is explored. A comparison of experimental data with those obtained earlier shows that the suggested dependences of the ion current density and deposition rate on the HiPIMS pulse time are typical for discharge systems with different cathode materials and configurations, i.e., for single- and dual-magnetron systems. This indicates a common nature of the phenomena observed and additionally confirms the results obtained.