材料科学
振幅
极化(电化学)
俘获
杂质
辐射
电场
扩散
载流子
原子物理学
光电子学
光学
物理
化学
热力学
物理化学
生物
量子力学
生态学
作者
Abdumalik Gaibov,Kutbiddin Ilovitddinovich Vakhobov,B.V. Ibragimova,U.E. Zhuraev,D. T. Rasulova
出处
期刊:Materials Science Forum
日期:2022-01-11
卷期号:1049: 317-324
被引量:1
标识
DOI:10.4028/www.scientific.net/msf.1049.317
摘要
The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.
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