Lv41
558 积分 2022-09-21 加入
Tungsten Diselenide Transistors: Layer Number Dependence, Channel Passivation and In‐Plane Gates
3小时前
待确认
p-Type 2D transistors from contact physics to complementary integration
8小时前
已完结
Wafer-scale integration of single-crystalline molybdenum disulfide for flexible electronics using oxide dry transfer
2个月前
已完结
Toward Suppression of Bias Instability in Monolayer WSe2 Top-Gate pFETs
2个月前
已完结
CO2‐Assisted Solution‐Phase Selective Assembly of 2D WS2‐WO3⋅H2O and 1T‐2H MoS2 to Desirable Complex Heterostructures
2个月前
已完结
High-performance p-type monolayer tungsten diselenide transistors
3个月前
已完结
Printing, folding and assembly methods for forming 3D mesostructures in advanced materials
4个月前
已完结
Manipulating MoS2 Thickness On‐Chip via Van Der Waals Delamination
4个月前
已关闭
Reconfigurable logic transistors with superlubric sliding electrodes
4个月前
已关闭
Wafer-scale dry transfer of graphene via thermally removable Sb2O3 sacrificial layer
4个月前
已关闭
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