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480 积分 2026-02-25 加入
Infrared spectroscopy characterization of 3C–SiC epitaxial layers on silicon
4个月前
已完结
On the Infrared Thickness Measurement of Epitaxially Grown Silicon Layers
6个月前
已完结
Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature
6个月前
已完结
Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration
6个月前
已完结
4H‐SiC: a new nonlinear material for midinfrared lasers
6个月前
已完结
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