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(Digital Presentation) Characterization and Compression Technology of Real 3D Corner Residue Between Dummy Gate and Formed Fin During an Advanced Inductive Coupled Plasma (ICP) Gate Etch Process in Advanced FinFET
19天前
已完结
Physics-Informed Exponential Framework for Predicting Ge Incorporation during SiGe Selective Epitaxy in Nanoscale Trenches
3个月前
已完结
Performance Improvements in GAA NSFET Devices and Circuits Using a Hybrid Dual-κ Spacer Strategy at 3 nm Node and Beyond
10个月前
已完结
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors
11个月前
已完结
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