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31 积分 2020-05-11 加入
Physics-Informed Exponential Framework for Predicting Ge Incorporation during SiGe Selective Epitaxy in Nanoscale Trenches
1个月前
已完结
Performance Improvements in GAA NSFET Devices and Circuits Using a Hybrid Dual-κ Spacer Strategy at 3 nm Node and Beyond
9个月前
已完结
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors
9个月前
已完结
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