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70 积分 2025-10-14 加入
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
4天前
已完结
Highly selective ozone-treated β -Ga2O3 solar-blind deep-UV photodetectors
11天前
已完结
Anisotropic phonon properties and effective electron mass in α-Ga2O3
13天前
已完结
Leveraging defect-induced internal gain for high-performance β-Ga2O3 photodetectors on patterned sapphire substrates
17天前
已关闭
Suppression of phonon emission by Auger recombination-assisted carrier transfer in 1D/2D heterojunctions
26天前
已关闭
Growth characteristics and properties of Ga2O3 films fabricated by atomic layer deposition technique
27天前
已完结
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along ⟨1¯21¯⟩
1个月前
已完结
Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of β-Ga2O3 ultraviolet photodetectors
3个月前
已完结
Intrinsic electron mobility limits in β-Ga2O3
5个月前
已完结
Anisotropy of electrical and optical properties in β- Ga2O3 single crystals
7个月前
已完结
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