Lv612
1680 积分 2025-10-13 加入
Study on the Electrical Characteristics of Al-rich AlGaN HEMT with TiN Gate
3天前
已完结
Technological Features and Parametric Verification of a 0.25 µm Gallium Nitride-on-Silicon Process Route for Microwave Monolithic Integrated Circuits at the National Research Center “Kurchatov Institute”
3天前
已完结
Interplay between Barrier Inhomogeneity and Interface States in Pt/n-GaN Schottky Barrier Diodes
8天前
已关闭
Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment
9天前
已完结
Multi-Scale and Multi-Physics Analysis of a GaN System in Package Using Fan Out Wafer Level Packaging (FO-WLP) Technology
10天前
已完结
AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs
24天前
已完结
Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga2O3 Buffer and InGaN Back-Barrier Layers
24天前
已完结
Analysis on BVDSS Outlier Chips and Screening Technology for 1.2 kV Automotive SiC MOSFETs
29天前
已完结
Pre- and post-breakdown electrical studies in ultrathin Al2O3 films by conductive atomic force microscopy
1个月前
已完结
Comparative Analysis of Electrical Characteristics of $\beta-\text{Ga}_{2} \mathrm{O}_{3}$ Schottky and PN Diodes
1个月前
已完结
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