Lv530
1510 积分 2025-10-13 加入
Design of a 550 W high-efficiency asymmetric improved three-stage Doherty power amplifier based on GaN HEMT
3小时前
已完结
A p-Type GaN MOSHFET on Si substrates with enhanced-mode operation and high-temperature stability
3小时前
已完结
Analysis of Non-ideal Ohmic Characteristics in Mg-incorporated P-type GaN Contacts
13天前
已关闭
Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices
17天前
已完结
Controlling point defect populations in AlGaN deep UV LEDs
19天前
已完结
Recombination-Enhanced Dislocation Glide in 4H-SiC and GaN under Electron Beam Irradiation
1个月前
已完结
Packaging and integration of silicon carbide power devices
1个月前
已完结
Effect of Al Composition in AlxGa1 – xN Barrier on Performance of Gate Field-Plate GaN HEMTs on SiC Substrates
2个月前
已完结
Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates
2个月前
已完结
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