Lv56
1340 积分 2025-10-13 加入
Packaging and integration of silicon carbide power devices
1天前
已完结
Effect of Al Composition in AlxGa1 – xN Barrier on Performance of Gate Field-Plate GaN HEMTs on SiC Substrates
8天前
已完结
Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates
8天前
已完结
Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications
8天前
已完结
Supersymmetric Single-Lateral-Mode GaN-Based Ridge-Waveguide Edge-Emitting Lasers
8天前
已完结
Analysis of Channel Thermal Resistance in AlGaN/GaN High Electron Mobility Transistors-on SiC with Different Buffer Thickness
8天前
已关闭
Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates
29天前
已完结
MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices
29天前
已完结
Slew rate control of a 600 V 55 mΩ GaN cascode
1个月前
已完结
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