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90 积分 2024-07-03 加入
Limitation to Shockley–Read–Hall model due to direct photoionization of the defect states
5小时前
待确认
Effect of defect saturation on terahertz emission and detection properties of low temperature GaAs photoconductive switches
5小时前
已完结
Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiated n-type silicon
3天前
已完结
Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer
4天前
已完结
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
4天前
已完结
Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
13天前
已完结
Temperature dependence of the Fermi level in low-temperature-grown GaAs
13天前
已完结
Temperature-dependent transport properties of n+ GaAs/low-temperature GaAs/n+ GaAs structures grown by molecular beam epitaxy
13天前
已完结
Point defects in III–V materials grown by molecular beam epitaxy at low temperature
13天前
已完结
27%‐Efficiency Four‐Terminal Perovskite/Silicon Tandem Solar Cells by Sandwiched Gold Nanomesh
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