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30 积分 2026-06-07 加入
Electron and hole mobilities of GaN with bulk, quantum well, and HEMT structures
1个月前
已完结
Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN
1个月前
已完结
Hole mobility enhancement in high-Al-content p-type AlGaN via site-selective Mg doping
1个月前
已完结
On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate
1个月前
已完结
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