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Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs
24天前
已完结
Impact ionization coefficients and critical electric field in GaN
28天前
已完结
A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via
1个月前
已完结
Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
1个月前
已完结
Electron and hole mobilities of GaN with bulk, quantum well, and HEMT structures
3个月前
已完结
Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN
3个月前
已完结
Hole mobility enhancement in high-Al-content p-type AlGaN via site-selective Mg doping
3个月前
已完结
On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate
3个月前
已完结
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