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160 积分 2025-12-18 加入
Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage
4个月前
已关闭
Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage
4个月前
已关闭
High-mobility holes in gallium nitride and their quantum oscillations
5个月前
已完结
Growth of 100-mm-long SiC single crystals with reduced thermal stresses by the pulling physical vapor transport (PPVT) method
6个月前
已完结
Stress simulation of 6-inch SiC single crystal
6个月前
已完结
Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method
6个月前
已完结
Origins and characterization techniques of stress in SiC crystals: A review
6个月前
已完结
Unlocking different types of basal plane dislocations and its evolution in 4H-SiC
6个月前
已完结
Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals
8个月前
已完结
Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds
8个月前
已完结
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