Lv11
40 积分 2023-04-11 加入
Hafnium-doped GaN with n-type electrical resistivity in the 10−4 Ω cm range
1小时前
待确认
First-principles electronic structure of the delafossites ABO2 (A=Cu, Ag, Au; B=Al, Ga, Sc, In, Y): evolution of d10–d10 interactions
2天前
已完结
Substitutional diffusion of Mg into GaN from GaN/Mg mixture
4天前
已完结
Elastic strain relaxation in GaN/AlN nanowire superlattice
11天前
已完结
Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays
11天前
已完结
ZnO Nanowire UV Photodetectors with High Internal Gain
11天前
已完结
Single crystal diamond membranes for nanoelectronics
16天前
已完结
The world’s first high voltage GaN-on-Diamond power semiconductor devices
16天前
已完结
Stacked single-crystalline field-effect transistors
23天前
已完结
Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer
27天前
已完结
皖公网安备34019202002308
