Lv3
380 积分 2024-07-21 加入
Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics
16小时前
待确认
Manipulation of Encapsulated Plasmons in Solids for Photonic Applications
16小时前
待确认
Impact of post-ion implantation annealing on Se-hyperdoped Ge
16小时前
已关闭
全氧化镓薄膜同质p-n结
22天前
已完结
The in-situ parasitic microstructure interface and defect formation mechanism in (010) β-Ga2O3 epitaxial film via MOCVD
22天前
已完结
Crystal-phase engineering of ε-Ga2O3 for high-performance deep UV photodetectors via MOCVD
22天前
已完结
Heteroepitaxial $\epsilon-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFETs on a 4-inch Sapphire Substrate with a Power Figure of Merit of 0.29 $\text{GW}/\text{cm}^{2}$
1个月前
已完结
Garment image style transfer based on deep learning
1个月前
已关闭
N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded p-n junction by a one-step integrated approach
2个月前
已完结
High-performance UV photodetector based on β-Ga2O3/GaN heterojunction prepared by a new route of reverse substitution growth
2个月前
已完结
皖公网安备34019202002308
