Lv5
1080 积分 2023-10-12 加入
Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications
4小时前
待确认
Bit Line Hammering in Si-Based VCT DRAM: A New Security Challenge and Its Mitigation
3个月前
已完结
Review—Post-Chemical Mechanical Planarization Cleaning Technology
4个月前
已完结
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM
6个月前
已完结
4F2 Stackable Polysilicon Channel Access Device for Ultra-Dense NVDRAM
6个月前
已完结
A Three Dimensional DRAM (3D DRAM) Technology for the Next Decades
6个月前
已完结
Highly scalable 4F2 cell transistor for future DRAM technology
6个月前
已完结
Balancing Charge Loss and Carrier Mobility: A Multiscale Modeling Approach for Device Geometry Optimization of VS-DRAM Dual-Gate Access Transistors
6个月前
已完结
uppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure
6个月前
已完结
A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation
6个月前
已完结
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