Lv5
1120 积分 2023-10-12 加入
Bit Line Hammering in Si-Based VCT DRAM: A New Security Challenge and Its Mitigation
3天前
已完结
Review—Post-Chemical Mechanical Planarization Cleaning Technology
1个月前
已完结
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM
2个月前
已完结
4F2 Stackable Polysilicon Channel Access Device for Ultra-Dense NVDRAM
2个月前
已完结
A Three Dimensional DRAM (3D DRAM) Technology for the Next Decades
2个月前
已完结
Highly scalable 4F2 cell transistor for future DRAM technology
2个月前
已完结
Balancing Charge Loss and Carrier Mobility: A Multiscale Modeling Approach for Device Geometry Optimization of VS-DRAM Dual-Gate Access Transistors
2个月前
已完结
uppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure
2个月前
已完结
A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation
2个月前
已完结
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices
2个月前
已完结
皖公网安备34019202002308
