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80 积分 2025-10-11 加入
Hydrogen passivation of electron traps and fixed charges in SiO2/β-Ga2O3(001) MOS structures
11小时前
已完结
1.5-kV Blocking Vertical AgOx/β-Ga2O3 Schottky Barrier Diodes with Ultralow Leakage Current and Over 1013 Rectification Ratio
12天前
已完结
Lateral Semiconductor–Free-Space Gate Transistors
12天前
已关闭
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
14天前
已完结
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