Lv4
480 积分 2025-10-11 加入
2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure
2天前
已完结
Growth dynamics dependence of high quality β-Ga2O3 thin films prepared by low pressure chemical vapor deposition
2个月前
已完结
Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga 2 O 3
2个月前
已完结
Performance and Stability Improvements in β-Ga 2 O 3 MOSFET With Thin HfAlO Gate Dielectric by O 2 Plasma Treatment
4个月前
已关闭
A Novel 2.7 kV 3C-SiC/Ga2O3 Hetero-Channel E-mode MISFET With BFOM up to 5.17 GW/cm2
4个月前
已完结
Hydrogen passivation of electron traps and fixed charges in SiO2/β-Ga2O3(001) MOS structures
4个月前
已完结
1.5-kV Blocking Vertical AgOx/β-Ga2O3 Schottky Barrier Diodes with Ultralow Leakage Current and Over 1013 Rectification Ratio
5个月前
已完结
Lateral Semiconductor–Free-Space Gate Transistors
5个月前
已关闭
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
5个月前
已完结
皖公网安备34019202002308
