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14 积分 2024-03-14 加入
Effects of high temperature annealing on the atomic layer deposited HfO2/β-Ga2O3(010) interface
6个月前
已完结
The electrical and dielectric features of Al/YbFeO3/p-Si/Al and Al/YbFe0.90Co0.10O3/p-Si/Al structures with interfacial perovskite-oxide layer depending on bias voltage and frequency
6个月前
已完结
The temperature induced current transport characteristics in the orthoferrite YbFeO 3 − δ thin film/p-type Si structure
6个月前
已完结
The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range
6个月前
已完结
Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties
7个月前
已完结
MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3
7个月前
已完结
Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD
7个月前
已完结
Hydrothermal synthesis of Bi₂WO₆ for photocatalytic tetracycline degradation: optimization, mechanism, and performance evaluation
7个月前
已完结
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
7个月前
已完结
Analysisoftemperaturedependent forward characteristicsofNi/(-201)β-Ga2O3Schottkydiodes,
7个月前
已完结
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