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128 积分 2024-11-07 加入
Study on the mechanism of Ge thin film exfoliation induced by H and He ion implantation
8小时前
求助中
半导体智能剥离技术发展历程、进展与展望
8小时前
待确认
Efficient production of silicon-on-insulator films by co-implantation of he+ with H+
1个月前
已完结
Surface damage in silicon co-implanted with He and H ions: Effect of H implant energy
1个月前
已完结
Evolution of interfacial defects by H/He co-implantation in 300 mm SOI layer transfer process
1个月前
已关闭
Blistering of silicon crystals by low keV hydrogen and helium ions
1个月前
已完结
Depth distributions of sulfur implanted into silicon as a function of ion energy, ion fluence, and anneal temperature
1个月前
已完结
Depth distributions and range parameters for He implanted in Si and GaAs
1个月前
已完结
Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon
1个月前
已完结
] P. Erhart, K. Albe, Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide, Phys. Rev. B 71 (2005), 035211
2个月前
已完结
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