SciHub
文献互助
期刊查询
一搜即达
科研导航
交流社区
登录
注册
发布
文献
求助
首页
我的求助
捐赠本站
愉快摩托
Lv1
20 积分
2023-01-12 加入
最近求助
最近应助
互助留言
Electrical and structural characteristics of aged RF GaN HEMTs and irradiated high-power GaN HEMTs with protons and heavy ions
3天前
已完结
Principles and Properties of Nitride-Based Electronic Devices
26天前
已完结
Radiation-Induced DC Parametric Degradation of Enhancement Mode GaN-on-(111)Silicon High-Electron-Mobility Transistors
1个月前
已完结
Trap behaviors in AlGaN–GaN heterostructures by C–V characterization
2个月前
已完结
A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation
3个月前
已完结
Proton radiation and thermal stability of gallium nitride and gallium nitride devices
3个月前
已关闭
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress
4个月前
已完结
Enhance Gate Reliability and Threshold Voltage Stability of p-GaN Gate High-Electron-Mobility Transistors
4个月前
已完结
Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs
4个月前
已完结
Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis
4个月前
已完结
没有进行任何应助
感谢
1年前
感谢
1年前
最近帖子
最近评论
没有发布任何帖子
没有发布任何评论