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160 积分 2026-01-19 加入
Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps
3个月前
已完结
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
3个月前
已完结
Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor
3个月前
已完结
Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors
3个月前
已完结
High electron mobility of AlxGa1−xN evaluated by unfolding the DFT band structure
4个月前
已完结
Electron mobility in AlN from first principles
4个月前
已完结
Relationship of thermal boundary conductance to structure from an analytical model plus molecular dynamics simulations
7个月前
已完结
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