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120 积分 2026-01-19 加入
Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps
1个月前
已完结
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
1个月前
已完结
Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor
1个月前
已完结
Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors
1个月前
已完结
High electron mobility of AlxGa1−xN evaluated by unfolding the DFT band structure
2个月前
已完结
Electron mobility in AlN from first principles
2个月前
已完结
Relationship of thermal boundary conductance to structure from an analytical model plus molecular dynamics simulations
5个月前
已完结
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