Lv4
422 积分 2024-04-16 加入
High-Performance Solar-Blind Ultraviolet Photodetectors Based on a Ni/β-Ga2O3 Vertical Schottky Barrier Diode
11天前
已完结
Forward current transport mechanism of the vertical β-Ga2O3 diode with a 1.6 nm SiO2 interlayer on Sn-doped (2¯01) substrates
11天前
已关闭
Electric field reconfiguration in W/ β -Ga2O3 Schottky barrier diodes under negative bias stress
11天前
已完结
Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Base Power Device Applications
1个月前
已完结
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
1个月前
已完结
Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
3个月前
已完结
Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales
4个月前
已完结
Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs
4个月前
已关闭
Anomalous dynamic on-resistance instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under power cycling tests
4个月前
已完结
The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage
4个月前
已完结
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