Lv4
434 积分 2024-04-16 加入
Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Base Power Device Applications
3小时前
已完结
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
7天前
已完结
Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
2个月前
已完结
Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales
2个月前
已完结
Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs
2个月前
已关闭
Anomalous dynamic on-resistance instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under power cycling tests
2个月前
已完结
The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage
2个月前
已完结
E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
2个月前
已完结
Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT
2个月前
已完结
Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability
2个月前
已完结
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