Lv3
372 积分 2022-06-28 加入
Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers
16小时前
待确认
Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor
16小时前
已完结
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
20天前
已完结
Visible to Near‐Infrared Photodetection Based on Ternary Organic Heterojunctions
25天前
已完结
Electrochromic properties of NiO films prepared by atomic layer deposition
25天前
已完结
Inverted perovskite solar cells with over 2,000 h operational stability at 85 °C using fixed charge passivation
25天前
已完结
In-plane ferroelectricity with high Curie temperatures in nonequilibrium SnSe 1-x S x van der Waals semiconductors
1个月前
已完结
Electrically Switchable Polarization in Bi2O2Se Ferroelectric Semiconductors
1个月前
已完结
Developing fatigue-resistant ferroelectrics using interlayer sliding switching
1个月前
已完结
Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides
1个月前
已完结
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