Lv2
184 积分 2025-08-18 加入
Size-dependent characteristics of GaN-based micro-LEDs for simultaneous display and wireless optical communication
6小时前
待确认
Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance
3个月前
已完结
Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics
4个月前
已完结
AlScN: A III-V semiconductor based ferroelectric
6个月前
已完结
Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack
6个月前
已完结
Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3
7个月前
已完结
High-performance AlGaN/GaN HEMTs with Hf0.5Zr0.5O2-based ferroelectric gate by pulsed laser deposition
7个月前
已完结
Enhanced performance of normally-off AlGaN/GaN MOS-HEMTs taking advantage of extreme-k BaTiO3 with prominent dielectric polarization
7个月前
已完结
CMOS‐Compatible ScAlN Ferroelectric Thin Films with Enhanced Polarization for High‐Performance FeFET Memory and Artificial Synapses
7个月前
已完结
Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
7个月前
已完结
皖公网安备34019202002308
