Lv4
432 积分 2025-10-09 加入
Achieving Infinite Polarization Ratio in Photodetectors Using In‐Plane Anisotropic 2D Materials and Back‐to‐Back Schottky Structures
27天前
已完结
Control of Carrier Polarity and Schottky Barriers in Layered PdSe2 Field-Effect Transistors
2个月前
已完结
Deeply Exploring Anisotropic Evolution toward Large-Scale Growth of Monolayer ReS2
2个月前
已完结
2D AgTiPS6: a Cross‐Stacked In‐Plane Anisotropic Semiconductor for Broadband and Polarization‐Sensitive Photodetection
2个月前
已完结
Polarization-Sensitive Photodetector Based on b-AsP/In2Se3 Heterostructure
2个月前
已完结
Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS 2 ) field-effect transistors
2个月前
已完结
Polarization Sensitive Vacuum‐Ultraviolet Photodetectors Based on m‐Plane h‐BN
2个月前
已完结
Ferroelectric-tuned van der Waals heterojunction with band alignment evolution
2个月前
已完结
Broadband Polarization‐Sensitive Photodetection of Magnetic Semiconducting MnTe Nanoribbons
2个月前
已完结
Anisotropic Te/PdSe2 Van Der Waals Heterojunction for Self‐Powered Broadband and Polarization‐Sensitive Photodetection
2个月前
已完结
皖公网安备34019202002308
