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44 积分 2025-05-21 加入
(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
1天前
已完结
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
25天前
已完结
Photocurrent spectroscopy of 5-nm-wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers
1个月前
已完结
InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy
1个月前
已完结
Quantum-Confined Stark Effect in InGaAs/InP Quantum Wells Grown by Metal-Organic Chemical Vapor Deposition
1个月前
已关闭
Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators
2个月前
已完结
Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry
2个月前
已完结
Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping
2个月前
已关闭
Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
2个月前
已完结
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