Lv11
24 积分 2022-09-05 加入
Dramatic leakage current suppression in HfO2 gate dielectrics via atomic layer hydrogen manipulation
1小时前
待确认
Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment
1小时前
已完结
Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge
10天前
已完结
Hydrogen Promoted Copper Migration in the High Pressure Anneal Process
10天前
已完结
Selective Etching of SiO2 by Radical Recombination through NF3/H2 Pulsed RF Plasma
1个月前
已完结
Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration
1个月前
已完结
Record 60.3 mV/dec Subthreshold Swing and >20% Performance Enhancement in Gate-All-Around Nanosheet CMOS Devices Using O₃-Based Quasi-Atomic Layer Etching Treatment Technique
1个月前
已完结
Epitaxial growth of a silicon capping layer to mitigate roughness after the selective chemical etching of Si1-xGex
1个月前
已完结
High‐Precision In‐Sensor Computing Reaching Up to 10 Bits
3个月前
已完结
Interface reaction kinetics in SiGe oxidation
7个月前
已完结
皖公网安备34019202002308
