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40 积分 2022-09-05 加入
Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration
1天前
待确认
Record 60.3 mV/dec Subthreshold Swing and >20% Performance Enhancement in Gate-All-Around Nanosheet CMOS Devices Using O₃-Based Quasi-Atomic Layer Etching Treatment Technique
3天前
已完结
Epitaxial growth of a silicon capping layer to mitigate roughness after the selective chemical etching of Si1-xGex
4天前
已完结
High‐Precision In‐Sensor Computing Reaching Up to 10 Bits
1个月前
已完结
Interface reaction kinetics in SiGe oxidation
5个月前
已完结
A Two‐Step Dry Etching Model for Non‐Uniform Etching Profile in Gate‐All‐Around Field‐Effect Transistor Manufacturing
5个月前
已完结
Formation Mechanism of a Rounded SiGe-Etch-Front in an Isotropic Dry SiGe Etch Process for Gate-All-Around (GAA)-FETs
5个月前
已完结
Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors
5个月前
已完结
Fluid Simulation of the Plasma Characteristics in an Inductively Coupled Plasma Source with Planar and Cylindrical Coils
8个月前
已完结
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