Lv1
70 积分 2025-08-12 加入
Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
5小时前
待确认
Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes
5小时前
已完结
Promoted Current Injection in GaInN/GaN Multi‐Quantum Nanowire‐Based LEDs Coated With AZO Using Atomic Layer Deposition
1个月前
已完结
Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer
1个月前
已完结
Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes
1个月前
已完结
The current induced mass transformation of Ag alloy wire bonded led chip
1个月前
已完结
Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface
1个月前
已完结
Reliability improvement of pad-extended on chip light-emitting diodes using an ultra-thin passivation layer
8个月前
已完结
Enhanced light scattering effect of wrinkled transparent conductive ITO thin film
9个月前
已关闭
Effects of the optical absorption of a LED chip on the LED package
9个月前
已完结
皖公网安备34019202002308
