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2025-01-07 加入
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Electrochemical metallization memories—fundamentals, applications, prospects
4小时前
已完结
In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory
4小时前
已完结
Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures
3天前
已完结
Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films
3天前
已完结
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System
3天前
已完结
Influence of the Position of Local Ta Doping in SiNx Resistive Random Access Memory
7天前
已完结
Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation
11天前
已完结
Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices
11天前
已完结
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices
11天前
已完结
Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides
14天前
已完结
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