Lv2
110 积分 2025-11-05 加入
基于氧化镓日盲紫外光电探测器的研究进展
2个月前
已完结
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
2个月前
已关闭
Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties
2个月前
已完结
Heteroepitaxy of (1 0 0)-oriented rutile GeO2 film on c-plane sapphire by pulsed laser deposition
2个月前
已完结
The fabrication of ultra-wide bandgap GeO2 thin films by DC magnetron sputtering: The impacts of growth temperature and post-annealing process
8个月前
已完结
皖公网安备34019202002308
