Lv5
1192 积分 2024-05-13 加入
Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates
23小时前
待确认
Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment
14天前
已完结
Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties
14天前
已完结
Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface
14天前
已完结
Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment
19天前
已完结
Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface
19天前
已完结
Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing
20天前
已完结
Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate
20天前
已完结
Ultra-low reverse leakage in large area kilo-volt class β -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
20天前
已完结
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
26天前
已完结
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