Lv5
812 积分 2024-05-13 加入
Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes
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High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition
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Heteroepitaxy of ε-Ga2O3 thin films grown on AlN/Si(1 1 1) templates by metal–organic chemical vapor deposition
9小时前
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Heteroepitaxial growth of β-Ga2O3 thin films on Si (111) substrates via interfacial engineering for self-powered ultraviolet photodetectors
9小时前
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ε-Ga2O3Grown onc-Plane Sapphire by MOCVD with a Multistep Growth Process
9小时前
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Heteroepitaxial Growth of α-Ga2O3 by MOCVD on a-, m-, r-, and c-Planes of Sapphire
9小时前
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Improved crystal quality of β-Ga2O3 on sapphire (0001) substrates by induced-nucleation technique and enhancement of Ga2O3 UV photodetectors performance
9小时前
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High-quality heteroepitaxial growth of β-Ga2O3 with NiO buffer layer based on Mist-CVD
9小时前
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The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1−x)2O3 Intermediate Buffer Layer
9小时前
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First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics
9小时前
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