Lv5
1172 积分 2024-05-13 加入
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study
2小时前
待确认
Thermodynamics of Ion-Cutting of β-Ga2O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate
11小时前
待确认
Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC
11小时前
待确认
First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process
12小时前
待确认
Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
12小时前
待确认
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
13天前
已完结
Thermodynamics of Ion-Cutting of β-Ga2O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate
13天前
已完结
Band Alignment Engineering in β-Ga2O3/4H-SiC Polar Heterojunctions via Orientation Selection: Interfacial Band Edge States and Hole Trapping
13天前
已完结
Over 1.3-kV β-Ga₂O₃ Vertical UMOSFET With High Concentration of N-Ion Implantation and Activation Annealing Temperature
1个月前
已完结
Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering
1个月前
已完结
皖公网安备34019202002308
