Lv5
1322 积分 2024-05-13 加入
Over 3 kV and ultra-low leakage vertical (011) β -Ga2O3 power diodes with engineered Schottky contact and high-permittivity dielectric field plate
30天前
已完结
1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
30天前
已完结
Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination
30天前
已完结
A review of device-level thermal management in wide and ultra-wide bandgap semiconductor devices
1个月前
已完结
Advances in β -Ga2O3-based PN junctions for solar-blind ultraviolet photodetectors
1个月前
已关闭
From architectures to device physics: Pathways to integrate lateral, vertical, and heterogeneous schemes in gallium oxide transistors
1个月前
已关闭
Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes
1个月前
已完结
Influence of oxygen vacancies on the photoresponse ofβ-Ga2O3/SiCn–ntype heterojunctions
1个月前
已完结
Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface
1个月前
已完结
Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment
1个月前
已完结
皖公网安备34019202002308
