Lv13
90 积分 2024-03-10 加入
UV Light-Emitting Diode With Buried Polarization- Induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction
7小时前
已完结
Achieving zero efficiency droop in highly efficient N-polar AlGaN tunnel junction-based 254 nm DUV LED
8小时前
已完结
Efficient AlGaN-Based Deep-Ultraviolet LED with N-side Located Tunnel Junction
8小时前
已完结
Performance evaluation of tunnel junction-based N-polar AlGaN deep-ultraviolet light-emitting diodes
8小时前
已完结
Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
8小时前
已完结
Advantages of AlGaN Tunnel Junction in N-Polar 284 nm Ultraviolet-B Light Emitting Diode
8小时前
已完结
Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes
1个月前
已完结
Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
1个月前
已完结
An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions
1个月前
已完结
Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
1个月前
已完结
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