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44 积分 2024-03-10 加入
High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer
1天前
已完结
Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
16天前
已完结
Growth defects in GaN films on sapphire: The probable origin of threading dislocations
16天前
已完结
Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3
16天前
已完结
Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si
16天前
已完结
The role of high-temperature island coalescence in the development of stresses in GaN films
16天前
已完结
Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface
20天前
已完结
Metal organic vapour phase epitaxy of GaN and lateral overgrowth
22天前
已完结
High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer
22天前
已完结
Recent Advances in GaN‐Based Power HEMT Devices
24天前
已完结
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