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50 积分 2026-04-13 加入
Semiconductor Science and Technology Purpose-Led Publishing, find out more. Temperature and well number dependence of exciton localization in InGaN/GaN quantum wells
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Different annealing temperature suitable for different Mg doped P-GaN
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ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra
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Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties
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An SEM-Based Nanomanipulation System for Multiphysical Characterization of Single InGaN/GaN Nanowires
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