Lv11
40 积分 2026-04-13 加入
High carrier concentrations of n- and p-doped GaN on Si(111) by nitrogen plasma-assisted molecular-beam epitaxy
4小时前
待确认
Improvement of radiation resistance of GaInP/GaInAs/Ge triple-junction solar cell with GaInAs/GaAsP quantum wells
12小时前
已完结
Semiconductor Science and Technology Purpose-Led Publishing, find out more. Temperature and well number dependence of exciton localization in InGaN/GaN quantum wells
3个月前
已完结
Different annealing temperature suitable for different Mg doped P-GaN
3个月前
已完结
ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra
3个月前
已完结
Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties
3个月前
已完结
An SEM-Based Nanomanipulation System for Multiphysical Characterization of Single InGaN/GaN Nanowires
3个月前
已完结
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