Lv3
294 积分 2024-04-29 加入
A Non-Volatile Radio Frequency Switch Based on an Ag/HfO2/MoS2/Pt Structure Memristor
4个月前
已关闭
Nonvolatile and volatile resistive switching characteristics in MoS2 thin film for RRAM application
4个月前
已完结
Metal oxide resistive memory switching mechanism based on conductive filament properties
5个月前
已完结
Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
5个月前
已完结
Two-dimensional materials based volatile memristors mediated by flexoelectric effect
5个月前
已完结
Resistive Switching Behavior of Hafnium Oxide Thin Film Grown by Magnetron Sputtering
5个月前
已完结
Radio frequency switching devices based on two-dimensional materials for high-speed communication applications
5个月前
已完结
Controllable electrical characteristic of Ti3C2T2/MoS2 (T = OH, F, O) interfaces for high performance electronics: Insights from first-principles
11个月前
已完结
皖公网安备34019202002308
