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224 积分 2023-02-17 加入
Epitaxial high-K barrier AlBN/GaN HEMTs
23天前
已完结
Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics
1个月前
已完结
Al1‐xScxN‐Based Ferroelectric Domain‐Wall Memristors
1个月前
已完结
Ferroelectric materials toward next-generation electromechanical technologies
1个月前
已完结
Failure analysis of blocking leakage for high voltage RB-GCT
2个月前
已完结
Modelling of high mesa structure, analysis of medium layer delamination and structural optimization
2个月前
已完结
Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs
2个月前
已完结
Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
2个月前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
3个月前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
3个月前
已完结
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