Lv3
234 积分 2023-02-17 加入
Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics
18小时前
待确认
Al1‐xScxN‐Based Ferroelectric Domain‐Wall Memristors
21小时前
已完结
Ferroelectric materials toward next-generation electromechanical technologies
22小时前
已完结
Failure analysis of blocking leakage for high voltage RB-GCT
24天前
已完结
Modelling of high mesa structure, analysis of medium layer delamination and structural optimization
24天前
已完结
Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs
1个月前
已完结
Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
1个月前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
1个月前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
1个月前
已完结
Strain engineering of polar optical phonon scattering mechanism – an effective way to optimize the power-factor and lattice thermal conductivity of ScN
2个月前
已完结
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