Lv5
1330 积分 2024-01-02 加入
Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond
1个月前
已完结
Mn3Sn-based noncollinear antiferromagnetic tunnel junctions with bilayer boron nitride tunnel barriers
6个月前
已完结
Towards fab-compatible two-dimensional electronics
6个月前
已完结
Proposal for valleytronic materials: Ferrovalley metal and valley gapless semiconductor
7个月前
已完结
Sub-5 nm monolayer SnNX (X = Cl, Br)-based homogeneous CMOS devices
8个月前
已完结
Polarization-enhanced sub-5 nm Janus MoSiGeN4 FET for high-performance and low-power applications
8个月前
已完结
Defect-induced diverse electronic, magnetic and optical properties in monolayer CaP3
8个月前
已完结
Single-layer HfN2: symmetric scaling behavior in CMOS transistors
8个月前
已完结
Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors
8个月前
已完结
First-principles study of anisotropic planar 2D BC2N for sub-5 nm high-performance p-type transistors
8个月前
已完结
皖公网安备34019202002308
