Lv5
1150 积分 2024-01-02 加入
Sub-5 nm monolayer SnNX (X = Cl, Br)-based homogeneous CMOS devices
2天前
已完结
Polarization-enhanced sub-5 nm Janus MoSiGeN4 FET for high-performance and low-power applications
2天前
已完结
Defect-induced diverse electronic, magnetic and optical properties in monolayer CaP3
9天前
已完结
Single-layer HfN2: symmetric scaling behavior in CMOS transistors
21天前
已完结
Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors
21天前
已完结
First-principles study of anisotropic planar 2D BC2N for sub-5 nm high-performance p-type transistors
21天前
已完结
A proposed channel for ultra-short metal-oxide-semiconductor field-effect transistor: monolayer zirconium disulfide (ZrS2)
21天前
已完结
5 nm Gate length field-effect transistors based on monolayer α-In2X3 (X = S, Se, Te)
21天前
已完结
Ab initio quantum transport simulation of low-power and high-performance MOSFETs based on monolayer platinum diselenide
21天前
已完结
Polarization-enhanced sub-5 nm Janus MoSiGeN4 FET for high-performance and low-power applications
21天前
已完结