Lv51
1290 积分 2024-01-02 加入
Mn3Sn-based noncollinear antiferromagnetic tunnel junctions with bilayer boron nitride tunnel barriers
10天前
已完结
Towards fab-compatible two-dimensional electronics
21天前
已完结
Proposal for valleytronic materials: Ferrovalley metal and valley gapless semiconductor
1个月前
已完结
Sub-5 nm monolayer SnNX (X = Cl, Br)-based homogeneous CMOS devices
1个月前
已完结
Polarization-enhanced sub-5 nm Janus MoSiGeN4 FET for high-performance and low-power applications
1个月前
已完结
Defect-induced diverse electronic, magnetic and optical properties in monolayer CaP3
2个月前
已完结
Single-layer HfN2: symmetric scaling behavior in CMOS transistors
2个月前
已完结
Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors
2个月前
已完结
First-principles study of anisotropic planar 2D BC2N for sub-5 nm high-performance p-type transistors
2个月前
已完结
A proposed channel for ultra-short metal-oxide-semiconductor field-effect transistor: monolayer zirconium disulfide (ZrS2)
2个月前
已完结
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