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50 积分 2026-01-25 加入
Direct comparison of ferroelectric properties in Hf 0.5 Zr 0.5 O 2 between thermal and plasma-enhanced atomic layer deposition
1小时前
已关闭
Crystallization of (Hf, Zr)O2 thin films via non-heating process and their application to ferroelectric-gate thin film transistors
3天前
已完结
The ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films on indium tin oxide/Pt/TiO x /SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method
3天前
已完结
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