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42 积分 2023-12-16 加入
Mitigation of implantation-induced channeling suppression in 4H-SiC by sequential ion implantation with intermediate annealing
9小时前
已完结
Ion Implantation and Annealing Applications, Science and Technology
4天前
已完结
Mitigation of implantation-induced channeling suppression in 4H-SiC by sequential ion implantation with intermediate annealing
18天前
已完结
Advances and challenges in 4H silicon carbide: defects and impurities
1个月前
已完结
Comparison of electronic stopping cross sections for channeled implantation of Al ions between the and directions in 4H-SiC
2个月前
已完结
Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review
2个月前
已完结
MUSIC to Reduce Defects and Improve Throughput on Implants for SiC MOSFETs
3个月前
已完结
Characterizations on the doping of single-crystal silicon carbide
4个月前
已完结
Impact of Implantation Conditions on the In-Depth Distribution of Implanted Species in SiC and GaN
4个月前
已完结
The Detailed Analysis of Diffusion Behavior of implanted ions in 4H-SiC
4个月前
已完结
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