Lv4
790 积分 2020-10-29 加入
Strain-engineered photogalvanic anisotropy in SnP2X6 (X = S, Se) monolayers for high-performance optoelectronics
1个月前
已完结
Performance of Sub-5 nm field-effect transistors based on ZrS2/NbTe2 heterojunction from quantum transport simulations
3个月前
已完结
Integration of two-dimensional materials based photodetectors for on-chip applications
5个月前
已完结
The van der Waals MoSi2N4 materials family
5个月前
已完结
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