Lv21
136 积分 2026-06-18 加入
Polymorphic Hf(Zr)O2-Based Films for High-k Dielectrics
3小时前
待确认
Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone
8天前
已完结
Ultrathin Ferroelectric Hf 0.5 Zr 0.5 O 2 Films With Exceptional Endurance Enabled by Oxygen‐Engineered Nanolaminates
1个月前
已完结
Vertical Channel Transistor (VCT) as Access Transistor for Future 4F2 DRAM Architecture
1个月前
已完结
Demonstration of 2T1C 3D-DRAM With IGZO Vertical Channel Access Transistors for BEOL Monolithic Multi-Deck Stacking
2个月前
已完结
DRAM Technology & Design Optimization for Sub-10nm and Beyond
2个月前
已完结
Atomic Layer Deposition of Hafnium–Zirconium-Oxide Films Using a Liquid Cocktail Precursor Containing Hf(dmap)4 and Zr(dmap)4 for Ferroelectric Devices
3个月前
已完结
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
3个月前
已完结
Performance variation with pristine and doped high‐k materials via atomic layer deposition
3个月前
已完结
皖公网安备34019202002308
