Lv21
190 积分 2024-07-17 加入
Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth
2小时前
待确认
Quality improvement of SiC single crystal by modification of hot zone design adoption with denser graphite insulation in PVT growth
1个月前
已完结
Mechanism Reveal of Threading Edge Dislocation Multiplication during the Initial Stage of 4H-SiC Growth
3个月前
已完结
Control of the growth quality by optimizing the crucible structure for growth of large-sized SiC single crystal
4个月前
已完结
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