Lv21
180 积分 2024-07-17 加入
A review of the simulation studies on the bulk growth of silicon carbide single crystals
2小时前
待确认
Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components
2小时前
已完结
Porous graphite plate design in SiC PVT growth: optimized powder source evolution for enhanced crystal yield and quality
2小时前
已完结
Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules
18天前
已完结
Carbon Inclusions in the Growth of an 8‑inch 4H-SiC Crystal
18天前
已关闭
Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth
3个月前
已完结
Quality improvement of SiC single crystal by modification of hot zone design adoption with denser graphite insulation in PVT growth
4个月前
已完结
Mechanism Reveal of Threading Edge Dislocation Multiplication during the Initial Stage of 4H-SiC Growth
6个月前
已完结
Control of the growth quality by optimizing the crucible structure for growth of large-sized SiC single crystal
8个月前
已完结
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