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128 积分 2023-09-19 加入
Investigation of origin of polycrystalline defect in homoepitaxial (01¯1¯) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy
7天前
已完结
Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals
19天前
已完结
Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant
1个月前
已完结
Achievement of High‐Quality Gallium Oxide Epitaxial Growth via Machine Learning
1个月前
已完结
Investigation of origin of polycrystalline defect in homoepitaxial (01¯1¯) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy
1个月前
已完结
Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs
3个月前
已完结
Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior
3个月前
已完结
Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy
3个月前
已完结
Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors
3个月前
已完结
Controlling n-type conductivity of β-Ga2O3 by Nb doping
3个月前
已完结
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