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52 积分 2023-09-19 加入
Investigation of origin of polycrystalline defect in homoepitaxial (01¯1¯) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy
5天前
已完结
Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs
1个月前
已完结
Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior
1个月前
已完结
Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy
1个月前
已完结
Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors
1个月前
已完结
Controlling n-type conductivity of β-Ga2O3 by Nb doping
1个月前
已完结
Controllability of β-Ga2O3 single crystal conductivity by V doping
1个月前
已完结
Effect of high-temperature remelting on the properties of Sn-doped β-Ga2O3 crystal grown using the EFG method
1个月前
已完结
The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG
1个月前
已完结
Investigation of the crack extending downward along the seed of the β-Ga2O3 crystal grown by the EFG method
1个月前
已完结
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