| 标题 |
Investigation of origin of polycrystalline defect in homoepitaxial (01¯1¯) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Sayleap Sdoeung; Kohei Sasaki; Chia-Hung Lin; Y. Yamashita; Yuki Ueda; et al 出版日期:2026-06-15 |
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(2025-6-4)