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Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes
45分钟前
待确认
Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN
50分钟前
已完结
Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures
58分钟前
已完结
X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films
1小时前
已完结
Organic electroluminescent diodes
4个月前
已完结
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