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236 积分 2025-10-13 加入
Design of Four-Level Phase-Change Memory Ge2sb2te5/Ge50te50 Bilayer Films and Study of Their Crystallization Behaviors
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Nature of Atomic Bonding and Atomic Structure in the Phase-ChangeGe2Sb2Te5Glass
1天前
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Reverse Monte Carlo Simulation: A New Technique for the Determination of Disordered Structures
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Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set
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Generalized Gradient Approximation Made Simple
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Multivalency-Induced Band Gap Opening at MoS2 Edges
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Breaking the Speed Limits of Phase-Change Memory
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Thermally Assisted Atomic-Scale Intermixing and Ordering in GeTe–Sb2Te3 Superlattices
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Revealing the crystallization kinetics of melt-quenched GeTe for realistic phase-change memory applications
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Multi-layer heterojunction phase change thin films with extremely low resistance drift
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