Lv2
158 积分 2023-08-20 加入
Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure
12天前
已关闭
A comparative study of photoluminescence internal quantum efficiency determination method in InGaN/GaN multi-quantum-wells
12天前
已关闭
Molecular beam epitaxy growth and characterization of ScGaN epilayers
29天前
已完结
Effects of Sputtering Power and Annealing Temperature on the Properties of Sc-doped ZnO Thin Films
2个月前
已完结
Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration
3个月前
已完结
Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy
3个月前
已完结
Metal contacts to n-type GaN
4个月前
已关闭
Novel High Temperature Annealed Schottky Metal for GaN Devices
4个月前
已完结
热轧板横折缺陷的成因分析
5个月前
已完结
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