Lv11
78 积分 2024-11-11 加入
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System
8小时前
待确认
Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers
2天前
已完结
Designing High‐Performance Storage in HfO2/BiFeO3 Memristor for Artificial Synapse Applications
3天前
已完结
Stability of Quantum Dots, Quantum Dot Films, and Quantum Dot Light‐Emitting Diodes for Display Applications
17天前
已完结
Metal–Oxide RRAM
17天前
已完结
Emerging Negative Photoconductivity Effect‐Based Synaptic Device for Optoelectronic In‐Sensor Computing
22天前
已完结
Dual‐Way Alternation Sensing Memristors Based on (BA)2(MA)3Pb4Br13 Ferroelectric Quantum Dots with Sub‐0.16 V Switching for Broadband Image‐Recognition Systems
1个月前
已完结
Artificial Optoelectronic Synapse Featuring Bidirectional Post‐Synaptic Current for Compact and Energy‐Efficient Neural Hardware
1个月前
已完结
Core‐Shell Colloidal Quantum Dots for Energy Conversion
1个月前
已完结
Suppression of Tin Oxidation via Sn→B Bonding Interactions for High‐Resolution Lead‐Free Perovskite Neuromorphic Imaging Sensors
1个月前
已完结
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