Lv22
152 积分 2024-09-04 加入
Effect of Ultraviolet-Ozone Treatment on MoS2 Monolayers: Comparison of Chemical-Vapor-Deposited Polycrystalline Thin Films and Mechanically Exfoliated Single Crystal Flakes
2小时前
已完结
Surface modification for improvement of crystallinity of MoS2 using ultraviolet–ozone treatment
2小时前
已完结
Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur‐Vacancy Engineering
1天前
已完结
Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering
1天前
已完结
Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric Layers
1天前
已完结
N-type charge-transfer doping to physical-vapor-deposited MoS2 films using atomic-layer-deposited HfO2 films
1天前
已完结
Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing
1天前
已完结
Performance enhancement of WS2 transistors via double annealing
1个月前
已完结
A clean van der Waals interface between the high-k dielectric zirconium oxide and two-dimensional molybdenum disulfide
2个月前
已完结
Reducing MoS2 FET contact resistance by stepped annealing to optimize device performance
2个月前
已完结
皖公网安备34019202002308
